View IXFN210N20P_5067749.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN210N20P
VDSS ID25
RDS(on) trr
= =
200V 188A 10.5m 200ns
miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL 1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C Maximum Ratings 200 200 20 30 188 600 105 4 20 1070 -55 ... +175 175 -55 ... +175 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Advantages Easy to Mount Space Savings High Power Density V 4.5 200 TJ = 150C 25 2 10.5 V nA A mA m Applications DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives Uninterrupted Power Supplies High Speed Power Switching Applications Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Low Package Inductance Avalanche Rated Low RDS(ON) and QG Fast Intrinsic Diode G = Gate S = Source
S D S G
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 105A, Note 1
Characteristic Values Min. Typ. Max. 200 2.5
(c) 2010 IXYS CORPORATION, All Rights Reserved
DS100019A(05/10)
IXFN210N20P
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 105A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 105A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 60 103 18.6 3270 80 43 30 70 18 255 94 83 0.14 S nF pF pF ns ns ns ns nC nC nC C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 105A, VGS = 0V, Note 1 IF = 105A, -di/dt = 150A/s VR = 100V
Characteristic Values Min. Typ. Max. 210 800 1.3 200 1.34 18 A A V ns C A
Note
1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN210N20P
Fig. 1. Output Characteristics @ T J = 25C
220 200 180 160 VGS = 15V 10V 8V 350 300 VGS = 15V 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
250
ID - Amperes
ID - Amperes
140 120 100 80
7V
200
7V
150 100 6V
6V 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 5V 50
5V 0 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
220 200 180 160 VGS = 15V 10V 8V 3.0
Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature
VGS = 10V
2.6
R DS(on) - Normalized
7V
2.2
I D = 210A I D = 105A
ID - Amperes
140 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5V 6V
1.8 1.4
1.0
0.6
0.2 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current
3.0 TJ = 175C 2.6
160 200
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 150 200 250 300 350
1.8
VGS = 10V 15V - - - -
120
80
1.4
40
1.0
0.6 0 50 100
0 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TC - Degrees Centigrade
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXFN210N20P
Fig. 7. Input Admittance
180 160 140 180 160 140 TJ = - 40C
Fig. 8. Transconductance
100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 TJ = 150C 25C - 40C
g f s - Siemens
ID - Amperes
120
120 100
25C
150C 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 100V I D = 105A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
200
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260
150 100
50 0
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 25s 100s
f = 1 MHz
Cisss
Capacitance - PicoFarads
10,000
100
ID - Amperes
1,000
Coss
1ms 10
100 Crss 10 0 5 10 15 20 25 30 35 40
1
TJ = 175C TC = 25C Single Pulse DC
10ms 100ms
0.1 1 10 100 1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN210N20P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z (th )JC - C / W
0.01 0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_210N20P(9S) 5-26-10-A

▲Up To Search▲

Price & Availability of IXFN210N20P

	To Download IXFN210N20P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .